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Low transparency current density and improved temperature stability with a large characteristic temperature T0>650 K up to 80°C are demonstrated for 1.3 μm MBE grown QD-edge emitters. Digital modulation with an open eye pattern up to 12 Gb/s at room temperature and bit error rate below 10-12 for a 10 Gb/s modulation was realized for this wavelength. Semiconductor optical amplifiers based on InGaAs QDs achieved a chip gain of 28 dB. Conventionally doped semiconductor DBR QD-VCSEL containing 17 p-modulation doped QD layers demonstrated a CW output power of 1.7 mW and differential efficiency of 20 % at 20°C. First MOCVD grown QD-VCSEL with selectively oxidized DBRs and 9 QD-layers were realized, emission was at 1.1 μm. A CW multimode output power of 1.5 mW and external efficiency of 45 % was achieved at 20°C. The minimum threshold current from a device with 2 μm aperture was 85 μA.