By Topic

Cat-CVD SiN insulated-gate AlGaN/GaN HFETs with 163 GHz fT and 184 GHz fmax

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Higashiwaki, M. ; Nat. Inst. of Inf. & Commun. Technol., Tokyo ; Matsui, T. ; Mimura, T.

In conclusion, we demonstrated AlGaN/GaN HFETs with fT=163 GHz and fmax=184 GHz by using thin, high-Al-composition barrier layers, Cat-CVD SiN gate-insulating and passivation layers, and 60-nm T-gates defined by EB lithography

Published in:

Device Research Conference Digest, 2005. DRC '05. 63rd  (Volume:2 )

Date of Conference:

22-22 June 2005