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Sub-10 nm gate length metal/high-k SOI MOSFETs with NiSi/sub 2/ [111]-facetted full silicide source/drain

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6 Author(s)

Metal/high-k SOI MOSFETs with NiSi2/Si (111)-facetted FUSI S/D are promising for aggressively scaled devices down to sub-10 nm gate length. The facet junction technique that we have developed works more effectively as the gate length becomes smaller. This device concept can be applied to 3D structures such as FinFETs, and it can also relieve the scaling of SOI thickness

Published in:

Device Research Conference Digest, 2005. DRC '05. 63rd  (Volume:1 )

Date of Conference:

22-22 June 2005

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