By Topic

Demonstration of a high performance 40-nm-gate carbon nanotube field-effect transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Lin, Y.-M. ; T. J. Watson Res. Center, IBM, Yorktown Heights, NY ; Appenzeller, J. ; Chen, Z. ; Chen, Z.-G.
more authors

Carbon nanotubes (CNTs) are promising candidates for post-Si nanoelectronics (Avouris et al., 2003). They are particularly attractive for high-speed applications due to their ballistic properties and high Fermi velocity (~106 m/s) Liang et al., 2001. The small-signal switching speed of a transistor is determined by the intrinsic delay time tau = 2piCG/gm, where C G is the gate capacitance and gm=dId/dV gs is the transconductance. For carbon nanotube field-effect transistors (CNFETs), the highest gm reported so far is ~ 27 muS by Javey et al. (Javey et al., 2004) using a dielectric film of 8-nm HfO2 (K=15). In their CNFET, the gate capacitance per unit length is estimated to be CG/L=1.8times10-16 F/mum, resulting in a gate delay per unit length of dL=42 ps/mum. Here we present a high-performance CNFET with a delay time per unit length of dL=22 ps/mum, the smallest value reported for CNFETs to date. In order to further minimize the parasitic capacitances and lower the intrinsic gate capacitance, we utilize a dual-gate design and fabricate a 40-nm gate CNFET possessing excellent subthreshold and output characteristics, which is the shortest gate length for a well-tempered CNFET demonstrated so far

Published in:

Device Research Conference Digest, 2005. DRC '05. 63rd  (Volume:1 )

Date of Conference:

22-22 June 2005