Referenced Items are not available for this document.
In the present work, the authors describe PMC memory devices based on Ag-Ge-S electrolytes. These have excellent temperature stability and are compatible with most BEOL processing in CMOS integrated circuits
Published in:
Device Research Conference Digest, 2005. DRC '05. 63rd
(Volume:1
)
Date of Conference: 22-22 June 2005
- Page(s):
- 47 - 48
- Print ISBN:
- 0-7803-9040-7
- INSPEC Accession Number:
- 9272321
- Conference Location :
- Santa Barbara, CA
- Digital Object Identifier :
- 10.1109/DRC.2005.1553049
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
