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High performance 1.28 μm GaInNAs double quantum well lasers

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5 Author(s)
Wei, Y.-Q. ; Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden ; Sadeghi, M. ; Wang, S.M. ; Modh, P.
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The use of multiple quantum wells and GaAs barriers favours the temperature stability and modulation bandwidth of GaInNAs lasers. It is shown that a very low threshold current density and a high characteristic temperature can be achieved for GaInNAs/GaAs double quantum well lasers, emitting at 1.28 μm, when grown by molecular beam epitaxy under favourable conditions.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 24 )