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High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process

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3 Author(s)
Giziewicz, Wojciech P. ; Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Fonstad, C., Jr. ; Prasad, S.

Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz.

Published in:

High Performance Devices, 2004. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

4-6 Aug. 2004