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Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5 μm range

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10 Author(s)
Schlichenmaier, C. ; Dept. of Phys. & Mater. Sci. Center, Philipps-Univ., Marburg, Germany ; Thranhardt, A. ; Meier, T. ; Gruning, H.
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Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5 μm range.

Published in:

Quantum Electronics and Laser Science Conference, 2005. QELS '05  (Volume:2 )

Date of Conference:

22-27 May 2005