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Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5 μm range.
Quantum Electronics and Laser Science Conference, 2005. QELS '05 (Volume:2 )
Date of Conference: 22-27 May 2005