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We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.
Quantum Electronics and Laser Science Conference, 2005. QELS '05 (Volume:1 )
Date of Conference: 22-27 May 2005