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Photonic crystal quantum-dot laser with ultra-low threshold

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7 Author(s)
Strauf, S. ; Dept. of Phys., California Univ., Santa Barbara, CA, USA ; Hennessy, K. ; Rakher, M.T. ; Badolato, A.
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We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.

Published in:
Quantum Electronics and Laser Science Conference, 2005. QELS '05  (Volume:1 )

Date of Conference: 22-27 May 2005

Page(s):
404 - 406 Vol. 1
Print ISBN:
1-55752-796-2
INSPEC Accession Number:
8689170
Digital Object Identifier :
10.1109/QELS.2005.1548796
Product Type:
Conference Publications

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