Referenced Items are not available for this document.
The paper outlined a new approach on dislocation engineering to make efficient light emitting diodes in silicon using otherwise conventional silicon processing. DELED (dislocation engineered light emitting diodes)was fabricated with erbium incorporated in the active region. Progress on tuning these devices from 1.5 to 1.6 mum by incorporation of additional optically active centres was demonstrated
Published in:
Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE
Date of Conference: 22-22 Oct. 2005
- Page(s):
- 625 - 626
- Print ISBN:
- 0-7803-9217-5
- INSPEC Accession Number:
- 8912141
- Conference Location :
- Sydney, NSW
- Digital Object Identifier :
- 10.1109/LEOS.2005.1548152
- Product Type:
- Conference Publications
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