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1,550-nm uncooled EA-modulator and EA/DFB for 10/40-Gbit/s low-power-consumption transceivers

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10 Author(s)
Makino, S. ; Central Res. Lab., Hitachi Ltd., Tokyo ; Arimoto, H. ; Kitatani, T. ; Shinoda, K.
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New uncooled 1,550-nm InGaAlAs electroabsorption-modulators and their laser-integration technologies were developed for 10/40-Gbit/s small-form-factor modules. For the first time, 10-Gbit/s 40-km SMF transmission and 40-Gbit/s operation were achieved up to 85degC

Published in:

Lasers and Electro-Optics Society, 2005. LEOS 2005. The 18th Annual Meeting of the IEEE

Date of Conference:

22-22 Oct. 2005