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The impact of channel engineering on the performance and reliability of LDMOS transistors

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8 Author(s)

In this paper, we study the performance and reliability of LDMOS (laterally diffused MOS) transistors, developed in a 0.25μm SiGe:C BiCMOS technology, for two different channel doping schemes a) uniform and b) single-sided halo (SH). We show that SH LDMOS transistors are more reliable and offer better DC and high frequency performance. We also demonstrate BVDS *Ft values up to 630GHzV with SH LDMOS transistors.

Published in:

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.

Date of Conference:

12-16 Sept. 2005