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Anomalous charge loss of reference cell in MLC flash memory due to process-induced mobile ion

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12 Author(s)
Sang-Pil Sim ; Semicond. R&D Center, Samsung Electron. Co., LTD., Gyeonggi-Do, South Korea ; Wook Hyun Kwon ; Heon Kyu Lee ; Jee Hoon Han
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This paper reports an anomalous charge loss observed from the reference cell of MLC flash memory induced by the cobalt salicide process. The reference cell is shown to exhibit unique retention behavior different from that of the normal array cell. Both the source and mechanism of the enhanced charge loss therein are investigated through various bake tests, mobile ion analysis, and structural analysis. A simple yet effective way to protect the reference cell from the process-induced mobile ions is proposed.

Published in:

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Date of Conference:

16-16 Sept. 2005