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Analytical model for nanowire and nanotube transistors covering both dissipative and ballistic transport

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2 Author(s)
Mugnaini, G. ; Dipt. di Ingegneria dell''Informazione: Informatica, Elettronica, Telecomunicazioni, Universita di Pisa, Italy ; Iannaccone, G.

We present an analytical model for silicon nanowire and carbon nanotube transistors that allows us to seamless cover the whole range of transport regimes from drift-diffusion to ballistic, taking into account the one-dimensional electron or hole gas in the channel. We propose an analytical description of the transition from drift-diffusion to ballistic transport based on the Buttiker approach to dissipative transport. We start from the derivation of an analytical expression for ballistic nanowire transistors and show that a generic transistor with finite scattering length can be described as a chain of elementary ballistic transistors. Then, we are able to compact the behavior of an arbitrary ballistic chain in a simple analytical model, suitable for circuit simulators. In the derivation of the model, we find a relation between the mobility and the mean free path that has deep consequences on the understanding of transport in nanoscale devices.

Published in:

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Date of Conference:

12-16 Sept. 2005

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