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High-resolution, back-side illuminated monolithic active pixel sensor for low-energy electron imaging

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4 Author(s)
G. Deptuch ; LEPSI, Strasbourg, France ; W. Dulinski ; M. Caccia ; M. Winter

A new domain of application of monolithic active pixel sensors, with respect to particle tracking, has been triggered by the innovative idea of a nondestructive beam monitoring system in the extraction lines of a hadron-therapy center. The beam monitoring exploits secondary electrons emitted from a submicrometer thick Al foil, intersecting the beam. Electrons are accelerated in an electrostatic field. The detection of low-energy electrons, up to 30 keV, is required. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in a standard VLSI technology, down to the thickness of the radiation sensitive layer. A thin entrance window, in the order of 100 nm, is provided. Monolithic active pixel sensors for low-energy electron imaging can be prospectively used in several domains: in bioscience for cell process study using radiotracers, e.g., 3H(18 keVβ-) or fluorescence imaging exploiting the Hybrid Photodiodes principle, in safety or environmental studies for neutron imaging with converters directly deposited or in micro-beam facilities for position resolving in studies of living cell irradiations. The low-energy electron imaging capabilities for installation inside an HPD test facility and the results obtained with a 3H marked source are shown. The detector used is the 1×106 pixel MIMOSA V chip. The back-thinning up to the epitaxial layer was applied, resulting in a high resolution, back-side illuminated imager.

Published in:

IEEE Transactions on Nuclear Science  (Volume:52 ,  Issue: 5 )