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Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

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9 Author(s)
T. Merelle ; Central R&D, STMicroelectronics, Crolles, France ; F. Saigne ; B. Sagnes ; G. Gasiot
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This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.

Published in:

IEEE Transactions on Nuclear Science  (Volume:52 ,  Issue: 5 )