Referenced Items are not available for this document.
This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:52
,
Issue:
5
)
Date of Publication: Oct. 2005
- Page(s):
- 1538 - 1544
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 8675743
- Digital Object Identifier :
- 10.1109/TNS.2005.855823
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 05 December 2005
- Issue Date :
- Oct. 2005
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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