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Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

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4 Author(s)
Castellani-Coulie, K. ; UMR CNRS, Univ. de Provence, Marseille, France ; Munteanu, D. ; Ferlet-Cavrois, V. ; Autran, J.

The sensitivity to heavy ions of a 0.25 μm fully-depleted SOI n-channel transistor is evaluated by numerical simulation. The variation of the bipolar gain versus LET and particle location in the structure is thoroughly investigated.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:52 ,  Issue: 5 )

Date of Publication:

Oct. 2005

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