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Threshold voltage reduction in strained-Si/SiGe MOS devices due to a difference in the dielectric constants of Si and Ge

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2 Author(s)
A. N. M. Zainuddin ; Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh ; A. Haque

We show that a higher value of the dielectric constant in SiGe relative to that in Si causes a reduction in the magnitude of the threshold voltage in strained-Si/SiGe n- and p-MOSFETs. This reduction increases with decreasing thickness of the strained-Si layer. Our results are consistent with the observed mismatch between calculated and measured threshold voltage shifts in strained-Si MOSFETs.

Published in:

IEEE Transactions on Electron Devices  (Volume:52 ,  Issue: 12 )