By Topic

The impact of TiN capping Layer on NiSi, CoSi2, and CoxNi1-xSi2 FUSI metal gate work function adjustment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Jun Liu ; Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA ; Huang-Chun Wen ; Jiong-Ping Lu ; Dim-Lee Kwong

The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN capping layer significantly altered the distribution of both n- and p-dopants during the FUSI process, which in turn changed the work functions of both As-doped and B-doped in the three FUSI metal gate systems. The work function tuning was found to have a linear relationship with the change of dopant level at the silicides/dielectric interface after adding TiN capping layer. The investigation of TiN capping layer on FUSI provided some insights on work function tuning mechanism in FUSI systems. This work also suggested a new methodology for optimizing the nMOS and pMOS work functions for CMOS device applications.

Published in:

IEEE Transactions on Electron Devices  (Volume:52 ,  Issue: 12 )