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The impact of TiN capping Layer on NiSi, CoSi2, and CoxNi1-xSi2 FUSI metal gate work function adjustment

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4 Author(s)
Jun Liu ; Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA ; Huang-Chun Wen ; Jiong-Ping Lu ; Dim-Lee Kwong

The impact of TiN capping layer on dual work functions of Ni, Co, and Co-Ni fully silicided (FUSI) metal gates was investigated. It was found that the TiN capping layer significantly altered the distribution of both n- and p-dopants during the FUSI process, which in turn changed the work functions of both As-doped and B-doped in the three FUSI metal gate systems. The work function tuning was found to have a linear relationship with the change of dopant level at the silicides/dielectric interface after adding TiN capping layer. The investigation of TiN capping layer on FUSI provided some insights on work function tuning mechanism in FUSI systems. This work also suggested a new methodology for optimizing the nMOS and pMOS work functions for CMOS device applications.

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Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 12 )