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Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes

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6 Author(s)
Hoffman, D. ; Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA ; Gin, A. ; Wei, Yajun ; Hood, Andrew
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The quantum efficiency of negative and positive luminescence in binary type-II InAs-GaSb superlattice photodiodes has been investigated in the midinfrared spectral range around the 5-μm wavelength. The negative luminescence efficiency is nearly independent on temperature in the entire range from 220 to 325 K. For infrared diodes with a 2-μm absorbing layer, processed without anti-reflection coating, a negative luminescence efficiency of 45% is found, indicating very efficient minority carrier extraction. The temperature dependent measurements of the quantum efficiency of the positive luminescence enables for the determination of the capture cross section of the Shockley-Read-Hall centers involved in the competing nonradiative recombination.

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Quantum Electronics, IEEE Journal of  (Volume:41 ,  Issue: 12 )