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A wide dynamic range CMOS image sensor with multiple exposure-time signal outputs and 12-bit column-parallel cyclic A/D converters

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5 Author(s)
M. Mase ; Shizuoka Univ., Hamamatsu, Japan ; S. Kawahito ; M. Sasaki ; Y. Wakamori
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A wide dynamic range CMOS image sensor with a burst readout multiple exposure method is proposed. In this method, maximally four different exposure-time signals are read out in one frame. To achieve the high-speed readout, a compact cyclic analog-to-digital converter (ADC) with noise canceling function is proposed and arrays of the cyclic ADCs are integrated at the column. A prototype wide dynamic range CMOS image sensor has been developed with 0.25-μm 1-poly 4-metal CMOS image sensor technology. The dynamic range is expanded maximally by a factor of 1791 compared to the case of single exposure. The dynamic range is measured to be 19.8 bit or 119 dB. The 12-bit ADC integrated at the column of the CMOS image sensor has DNL of +0.2/-0.8 LSB.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:40 ,  Issue: 12 )