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Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

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12 Author(s)
Musca, C.A. ; Microelectron. Res. Group, Univ. of Western Australia, Crawley, Australia ; Antoszewski, J. ; Winchester, K.J. ; Keating, A.J.
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The monolithic integration of a low-temperature microelectromechanical system (MEMS) and HgCdTe infrared detector technology has been implemented and characterized. The MEMS-based tunable optical filter, integrated with an infrared detector, selects narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The entire fabrication process is compatible with two-dimensional infrared focal plane array technology. The fabricated device consists of an HgCdTe SWIR photoconductor, two distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity, which is then removed to leave an air gap, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors shows a wide tuning range, and high percentage transmission is achieved with a tuning voltage of only 7.5 V. The full-width at half-maximum ranged from 95 to 105 nm over a tuning range of 2.2-1.85 μm.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 12 )