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Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

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4 Author(s)
Moon Sig Joo ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Jin Cho, Byung ; Balasubramanian, N. ; Dim-Lee Kwong

Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccrit) above which there is no Fermi-level pinning, and the C crit depends on the underlying gate dielectric material also.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 12 )

Date of Publication:

Dec. 2005

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