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Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a critical ratio (Ccrit) above which there is no Fermi-level pinning, and the C crit depends on the underlying gate dielectric material also.
Date of Publication: Dec. 2005