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Simple planar structure for high-performance AlInAs avalanche photodiodes

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5 Author(s)
Yagyu, E. ; Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan ; Ishimura, E. ; Nakaji, M. ; Aoyagi, T.
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We demonstrate a high-performance AlInAs avalanche photodiode (APD) based on a novel planar diode concept. The APD features a simple planar structure without a guardring, which simplifies production making it more like a PIN photodiode process. Measured device characteristics designed for 10-Gb/s use were a dark current of 0.16 μA, responsivity of 0.88 A/W, and a gain-bandwidth product of 120 GHz. Reliability was guaranteed by an aging test exceeding 2400 h, whose conditions were a reverse dark current of 100 μA at 175°C. These features and performance indicate that the AlInAs APD is highly practical.

Published in:

Photonics Technology Letters, IEEE  (Volume:18 ,  Issue: 1 )

Date of Publication:

Jan. 1, 2006

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