By Topic

Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Tao Yin ; Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA ; A. M. Pappu ; A. B. Apsel

We present a new approach to obtain low-cost and high-performance SiGe phototransistors in a commercial BiCMOS process. Photoresponsivity of 2.7 A/W was obtained for 850-nm detection due to the transistor gain, corresponding to 393% quantum efficiency. Responsivities of 0.13 A/W and 0.07mA/W were achieved for 1060 and 1310 nm with SiGe absorption. With V/sub ce/=2 V, we measure a -3-dB bandwidth of up to 5.3 GHz for phototransistors with a 4-μm2 active area and 2.0 GHz for phototransistors with 60-μm2 active area and finger contacts. This high-efficiency and high-speed phototransistor is an enabling device for monolithic receiver integration.

Published in:

IEEE Photonics Technology Letters  (Volume:18 ,  Issue: 1 )