By Topic

A new method to extract HBT thermal resistance and its temperature and power dependence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
R. Menozzi ; Dipt. di Ingegneria dell'Informazione, Univ. of Parma, Italy ; J. Barrett ; P. Ersland

This paper introduces a new technique for the measurement of the thermal resistance of HBTs. The method is very simple, because it requires only standard dc IC-VCE measurements taken at different baseplate temperatures, but it is able to account for the dependence of the thermal resistance on both the baseplate temperature and the dissipated power (under the simplifying assumption that the thermal resistance increases linearly with the dissipated power). We have obtained and shown consistent results extracted from devices with an emitter area ranging from 90 μm2 (1 finger) to 1080 μm2 (12 fingers). The thermal-resistance values extracted with a standard and well-known technique are seen to fall inside the range of our results. We have also applied an alternative method that assumes a linear dependence between thermal resistance and junction temperature, and we have shown that both models lead to similar results, which points to the consistency and robustness of our extraction technique.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:5 ,  Issue: 3 )