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This paper reviews techniques for physics-based device-level simulation of single-event effects (SEEs) in Si microelectronic devices and integrated circuits. Issues for device modeling of SEE are discussed in the context of providing physical insight into mechanisms contributing to SEE as well as providing predictive capabilities for calculation of SEE rates. Recent advances in device simulation methodology are detailed, including full-cell simulations and cross-section calculations from first principles. Examples of the application of physics-based SEE simulations are presented, including scaling trends in soft error sensitivity as predicted by device simulation, single-event latchup (SEL) simulations in CMOS structures, and recent simulations of single-event transient (SET) production and propagation in digital logic circuits.