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Measurement of modal gain in 1.1 μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures

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3 Author(s)
Z. Mi ; Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, USA ; S. Fathpour ; P. Bhattacharya

Single-pass optical gain of self-assembled InGaAs/GaAs p-doped tunnel injection quantum dot laser heterostructures emitting at 1.1 μm is measured by the multisection device technique. The heterostructures, consisting of three layers of quantum dots in the active region, demonstrate net modal gain as high as 57 cm-1.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 23 )