Referenced Items are not available for this document.
K-band RF capabilities of 90nm RF-CMOS combined with thin-film above-IC high-Q inductors is assessed by means of a 24 GHz LNA. The LNA, implemented as a single stage common-source amplifier led to state-of-the art results for CMOS technology at 24 GHz. Record noise figure of 3.2 dB is obtained with a gain of 7.5 dB. Input and output matching are respectively -16 dB and -30 dB. The LNA works with a 1V supply voltage and consumes only 10.6 mA.
Published in:
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Date of Conference: 12-16 Sept. 2005
- Page(s):
- 89 - 92
- Print ISBN:
- 0-7803-9205-1
- INSPEC Accession Number:
- 8802468
- Digital Object Identifier :
- 10.1109/ESSCIR.2005.1541565
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