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Investigations on nonvolatile and nonrotational phase change random access memory

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12 Author(s)
Shi, L.P. ; Data Storage Inst., Singapore ; Chong, T.C. ; Zhao, R. ; Li, J.M.
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In this work, phase change random access memory (PCRAM) was studied theoretically and experimentally. Phase change materials were deposited and their physical parameters were measured. A simulation and design software for PCRAM was developed based on multidisciplinary theories including electrodynamics, thermal conduction, crystallization kinetics and numerical computations. By introducing physical models of PCRAM elements, a general macromodel of the phase change random access memory (PCRAM) elements for HSPICE-based computer simulator is proposed. PCRAM array were designed, fabricated, and tested by using a self built tester. Also, near field optical scan microscope incorporated with fs laser was used to fabricate nano scale PCRAM cells

Published in:

Non-Volatile Memory Technology Symposium, 2005

Date of Conference:

10-10 Nov. 2005