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Spin polarized transport effects in III-V semiconductor heterostructures

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1 Author(s)
J. -M. George ; THALES Res. & Technol., Paris XI Univ., Orsay, France

Summary form only given. In the field of spintronics, GaMnAs, a ferromagnetic semiconductor, offers many advantages to study tunnel magnetotransport properties when used as an electrode. The complexity of the transport mechanisms associated with spin orbit coupled states make this material a powerful means for finding novel effects; also it provides new challenges for a theoretical understanding. This includes the tunnel magnetoresistance (TMR) across single or double barriers, tunneling anisotropic magnetoresistance (TAMR) and current induced magnetic switching (CIMS), as recently reported in such systems. I will discuss on the basis of magnetoresistance experiments with tunnel junctions the key elements to observe and understand such effects.

Published in:

2005 International Conference on MEMS,NANO and Smart Systems

Date of Conference:

24-27 July 2005