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A novel method for the modelling and the design of MESFETs and of any kind of heterojunction FET

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4 Author(s)
Godts, P. ; Univ. of Sci. & Tech. of Lille Flandres Artois, Villeneuve d''Ascq, France ; Depreeuw, D. ; Constant, E. ; Zimmermann, J.

A novel method for modelling field effect transistors (FETs) is described. It is applied to the study of a number of devices, including FETs, MODFETs, SISFETs, DMTs and multiple HEMTs (high-electron-mobility transistors). This method includes the most important physical effects in these devices, but is very simple and easy to implement on a microcomputer. It is used for the control of technological device processes realized in the laboratory as well as for the design of more efficient structures

Published in:

Circuits and Systems, 1988., IEEE International Symposium on

Date of Conference:

7-9 Jun 1988