Referenced Items are not available for this document.
A novel method for modelling field effect transistors (FETs) is described. It is applied to the study of a number of devices, including FETs, MODFETs, SISFETs, DMTs and multiple HEMTs (high-electron-mobility transistors). This method includes the most important physical effects in these devices, but is very simple and easy to implement on a microcomputer. It is used for the control of technological device processes realized in the laboratory as well as for the design of more efficient structures
Published in:
Circuits and Systems, 1988., IEEE International Symposium on
Date of Conference: 7-9 Jun 1988
- Page(s):
- 2061 - 2064 vol.3
- Meeting Date :
- 07 Jun 1988-09 Jun 1988
- INSPEC Accession Number:
- 3339868
- Conference Location :
- Espoo
- Digital Object Identifier :
- 10.1109/ISCAS.1988.15346
- Product Type:
- Conference Publications
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