By Topic

A novel method for the modelling and the design of MESFETs and of any kind of heterojunction FET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Godts, P. ; Univ. of Sci. & Tech. of Lille Flandres Artois, Villeneuve d''Ascq, France ; Depreeuw, D. ; Constant, E. ; Zimmermann, J.

A novel method for modelling field effect transistors (FETs) is described. It is applied to the study of a number of devices, including FETs, MODFETs, SISFETs, DMTs and multiple HEMTs (high-electron-mobility transistors). This method includes the most important physical effects in these devices, but is very simple and easy to implement on a microcomputer. It is used for the control of technological device processes realized in the laboratory as well as for the design of more efficient structures

Published in:

Circuits and Systems, 1988., IEEE International Symposium on

Date of Conference:

7-9 Jun 1988