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Total ionizing dose effects on the analog performance of a 0.13 μm CMOS technology

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5 Author(s)
Re, V. ; Dipt. di Ingegneria Industriale, Universita di Bergamo, Pavia, Italy ; Manghisoni, M. ; Ratti, L. ; Speziali, V.
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This paper presents a study of the ionizing radiation tolerance of static, signal and noise characteristics of 0.13 μm CMOS transistors, in the context of designing rad-hard analog integrated circuits. Device parameters were monitored before and after irradiation with 60Co γ-rays at a 10 Mrad (SiO2) total ionizing dose. The effects on key parameters such as threshold voltage shift and 1/f noise are studied and compared with the behavior under irradiation of devices in previous CMOS generations.

Published in:

Radiation Effects Data Workshop, 2005. IEEE

Date of Conference:

11-15 July 2005