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Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices

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2 Author(s)
Page, T.E., Jr. ; Raytheon Missile Syst., Tucson, AZ, USA ; Benedetto, J.M.

Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm2/mg.

Published in:

Radiation Effects Data Workshop, 2005. IEEE

Date of Conference:

11-15 July 2005