By Topic

A new compact temperature-compensated CMOS current reference

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Fiori, F. ; Dipt. di Elettronica, Politecnico di Torino, Italy ; Crovetti, P.S.

This paper describes a new circuit integrated on silicon, which generates temperature-independent bias currents. Such a circuit is firstly employed to obtain a current reference with first-order temperature compensation, then it is modified to obtain second-order temperature compensation. The operation principle of the new circuits is described and the relationships between design and technology process parameters are derived. These circuits have been designed by a 0.35 μm BiCMOS technology process and the thermal drift of the reference current has been evaluated by computer simulations. They show good thermal performance and in particular, the new second-order temperature-compensated current reference has a mean temperature drift of only 28 ppm/°C in the temperature range between -30°C and 100°C.

Published in:

Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:52 ,  Issue: 11 )