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Variable-area resonant tunnelling diodes using implanted gates

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3 Author(s)
C. J. Goodings ; Cambridge Univ., UK ; J. R. A. Cleaver ; H. Ahmed

A new fabrication technique is reported for variable-area resonant tunneling diodes in which control is achieved by means of a reverse-biased, implanted p-n junction surrounding the device. The characteristics of such devices are shown and interpreted.

Published in:

Electronics Letters  (Volume:28 ,  Issue: 16 )