Cart (Loading....) | Create Account
Close category search window

Silicon-carbide MESFET-based 400°C MEMS sensing and data telemetry

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wang, Run ; Electr. Eng. & Comput. Sci. Dept., Case Western Reserve Univ., Cleveland, OH, USA ; Ko, W.H. ; Young, D.J.

A prototype high-temperature silicon-carbide (SiC) MESFET-based microelectromechanical systems (MEMS) sensing and date telemetry module is reported for harsh environment applications. The module employs a MEMS silicon capacitive pressure sensor performing pressure to frequency conversion and an on-board spiral loop serving as an inductor for the LC resonator and also as a telemetry antenna. The system demonstrates a high-temperature performance up to 400°C, limited by the SiC MESFET characteristics, and achieves a telemetry distance of 1m.

Published in:

Sensors Journal, IEEE  (Volume:5 ,  Issue: 6 )

Date of Publication:

Dec. 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.