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This paper presents the high-frequency performance of the 130 and 90-nm SOI technologies as well as its integration capabilities and scalability. With a measured 303-GHz Ft, 1.6-mS/μm gm, and sub 1.1-dB NFmin up to 26-GHz the SOI NMOS transistors exhibits performances ahead of the ITRS roadmap. Passives are integrated in the microprocessor back-end, and the 1.8fF/μm2 capacitance density of the vertical native capacitor (VNCAP) in a 90nm SOI CMOS improves by 28%, as compared to a 120 nm SOI CMOS. In the circuit design section, we will show how this high-level of performance will expand the use of CMOS to high-performance millimeter-wave applications with examples of such circuits for frequency generation, and amplification.