Skip to Main Content
This paper presents an improved CMOS class AB power amplifier for radio frequency (RF) applications. The power amplifier along with the pre-amplification stage has a fully differential structure suitable for mixed-signal system-on-chip (SOC) implementation. Thorough simulations using a 3 V single-ended power supply and 0.18μm TSMC CMOS process technology indicate a capability to deliver 24dBm to a 50Ω antenna at a resonant frequency of 3 GHz with a drain efficiency of almost 50%. In addition, the transient output waveform (@ 3GHz) indicates a high degree of linearity in the output with a total harmonic distortion (THD) of around -58dB.