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A high efficiency 3GHz 24-dBm CMOS linear power amplifier for RF application

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1 Author(s)
S. M. R. Hasan ; Inst. of Inf. & Math. Sci., Massey Univ., Auckland, New Zealand

This paper presents an improved CMOS class AB power amplifier for radio frequency (RF) applications. The power amplifier along with the pre-amplification stage has a fully differential structure suitable for mixed-signal system-on-chip (SOC) implementation. Thorough simulations using a 3 V single-ended power supply and 0.18μm TSMC CMOS process technology indicate a capability to deliver 24dBm to a 50Ω antenna at a resonant frequency of 3 GHz with a drain efficiency of almost 50%. In addition, the transient output waveform (@ 3GHz) indicates a high degree of linearity in the output with a total harmonic distortion (THD) of around -58dB.

Published in:

Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)

Date of Conference:

20-24 July 2005