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Monolithic integrated millimeter-wave IMPATT transmitter in standard CMOS technology

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2 Author(s)
Al-Attar, T. ; Center for Integrated Syst., Stanford Univ., CA, USA ; Lee, T.H.

This paper describes impact avalanche transit time (IMPATT) diodes fabricated in 0.18-μm standard complementary metal-oxide-semiconductor technology to enable operation at 77 GHz. The lateral IMPATT diodes are integrated with a microstrip patch antenna, modified to provide impedance matching and widen the tuning range. The antenna dimensions and the impedance matching are designed using the high-frequency electromagnetic field solver Sonnet. The output spectrum has no visible spurious components. The transmitted power is -62 dBm at 76 GHz. The measured frequency is within 1.3% of the simulated value. It is hoped that this device will find application in automotive and communication systems.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:53 ,  Issue: 11 )

Date of Publication:

Nov. 2005

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