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A sub-1 mA LC SiGe BiCMOS 1.6 GHz differential VCO with KV Reduction

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1 Author(s)

A 1.6 GHz fully-integrated manufacturable, low-current, low close-in phase noise, differential SiGe HBT BiCMOS voltage controlled oscillator (VCO) is published herein. Low KV with 35 MHz/V nominal has been designed using p-type voltage variable varactors (pVVCs). This VCO was designed and measured in freescale semiconductor's HiP6wRF 0.4 m SiGe BiCMOS technology for -100 dBc/Hz at 100-kHz frequency offset or -96 dBc/Hz minimum over the entire tuning and trimming range and temperature. The oscillator has a trim/tune range from 1.35 to 1.75 GHz with a 825 Ampere core.

Published in:

Wireless and Microwave Technology, 2005. WAMICON 2005. The 2005 IEEE Annual Conference

Date of Conference:

2005

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