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A low-power tunable SiGe HBT LNA for wireless LAN applications

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3 Author(s)
Carta, C. ; Electromagn. Fields & Microwave Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland ; Carls, J. ; Bachtold, Werner

This paper presents the design, implementation and measurements of a BiCMOS integrated tunable low noise amplifier for 5 GHz WLAN applications. It consists of a cascode gain cell, noise and power matched to a 50 Ω input source, and power matched to a 50 Ω load. In order to broaden the available bandwidth, the output matching network is modified by means of a shunt varactor, thus allowing the tuning of output matching and peak gain over a band exceeding 1 GHz. The proposed topology modification proofs to have neglectable effects on other LNA features, such as noise figure, linearity and input matching. Realized in a 120 GHz-ft commercial BiCMOS technology, the circuit exhibits 13.2 dB of flat power gain, 2.3 dB of NF, -9 dBm of iIP3, -20.5 dBm of P1 dBm input and output return losses better than -10 dB in the 5-6 GHz band. Power consumption is 6 mW.

Published in:

Wireless and Microwave Technology, 2005. WAMICON 2005. The 2005 IEEE Annual Conference

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