By Topic

A low-power dual-band BiCMOS front-end for wireless LAN receivers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Carta, C. ; Electromagn. Fields & Microwave Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland ; Vogt, R. ; Bachtold, Werner

This paper presents a dual-band RF front-end for WLAN low-IF receivers, operating in the 2.4 GHz ISM band and the three 5 GHz U-NII bands. The RF receiver uses an LNA with dual input stages, replacing the use of multiple independent LNAs operating at different bands, and one multi-band image rejecting mixer, which exploits the inherent broadband frequency response of multi-stage polyphase filters and singly-balanced active mixers. The chosen architecture avoids the use of switches in the RF path by means of a dual-band resonator at the LNA-mixer interface. Fabricated in a 0.25 μm 47 GHz-ft BiCMOS technology, the circuit exhibits 33.4 dB of conversion gain, 4.1 dB of NF and -16.6 dBm of iIP3 in the 2 GHz mode, while in the 5 GHz mode conversion gain is 27 dB, NF is 8.6 dB and iIP3 is -11.6 dBm. Power consumption is 14.9 mW for the low-frequency mode, and 18.7 mW for the high-frequency mode. Making use of no external components, this chip provides a good basis for the realization of low-cost receivers for dual-band operation.

Published in:

Wireless and Microwave Technology, 2005. WAMICON 2005. The 2005 IEEE Annual Conference

Date of Conference:

2005