Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. We apologize for any inconvenience.
By Topic

Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Simmons, J.G. ; Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA ; Shur, M.

The authors propose a generation of high-speed heterostructure devices compatible with a modified MODFET. These devices include a modified MODFET with a buried p-channel, and variable threshold voltage MODFET, a lateral n-p-n bipolar transistor, and a three-terminal planar photodetector called a modulation-doped-field-effect photodetector, (MODFED). These devices can be integrated together and with an optical waveguide. The MODFED has high speed, high collection efficiency, and it may operate in either p-i-n mode with low noise or the avalanche mode with high grain. The gate terminal allows modulation of the photodetector output.<>

Published in:

Circuits and Systems, 1988., IEEE International Symposium on

Date of Conference:

7-9 June 1988