By Topic

A dual-Vt layout approach for statistical leakage variability minimization in nanometer CMOS

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ashouei, M. ; Georgia Inst. of Technol., Atlanta, GA, USA ; Chatterjec, A. ; Singh, A.D. ; De, V.

Process parameter variations cause large changes in the delay and the leakage power consumption of scaled nanometer CMOS circuits. In this paper, the problem of leakage power variation minimization in the presence of spatially correlated across-die process variations is addressed. It is shown that with minimal impact on delay, the placement of low-Vt gates in a layout can be performed in such a way to maximize the yield for a specified leakage power upper bound. For the obtained placement of low Vt gates, the layout can then be optimized for other important criteria such as wire length. Simulation of across-die variations for ISCAS benchmarks is performed and guidelines for distributing the low-Vt gates across the die are developed.

Published in:

Computer Design: VLSI in Computers and Processors, 2005. ICCD 2005. Proceedings. 2005 IEEE International Conference on

Date of Conference:

2-5 Oct. 2005