By Topic

FRAM memory technology - advantages for low power, fast write, high endurance applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

15 Author(s)
Bailey, R. ; Ramtron Int. Corp., Colorado Springs, CO, USA ; Fox, G. ; Eliason, J. ; Depner, M.
more authors

Summary form only given. FRAM memory technology offers a number of advantages over current memory technologies. For applications which require low power, fast write, or non-volatility with high write/read endurance, FRAM is quickly becoming the memory of choice. A number of commercial applications have been developed which benefit from these unique FRAM features and millions of units have been sold into these applications. In addition, FRAM technology offers a low cost solution for integration with logic arrays, analog, or SoC applications, especially for low power and portable electronic products. FRAM memory may also reduce or eliminate the need for multiple memory types embedded within SoC applications, thus reducing manufacturing cost and improving overall system performance. FRAM memory technology is also competitive with emerging new memory technologies, but is already commercially available. This paper will review the current technical capability of FRAM memory technology, its fundamental advantages or weaknesses with respect to other memory technologies, and its potential for integration into SoC, portable electronics, or other high functionality applications. We will highlight the electrical performance and reliability aspects of our latest 130nm gate, 5 level metal Cu/FSG 4MBit/ 8MBit FRAM technology driver.

Published in:

Computer Design: VLSI in Computers and Processors, 2005. ICCD 2005. Proceedings. 2005 IEEE International Conference on

Date of Conference:

2-5 Oct. 2005