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Further insight into the physics and modeling of floating-body capacitorless DRAMs

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8 Author(s)
Villaret, A. ; STMicroelectron., Crolles, France ; Ranica, R. ; Malinge, P. ; Masson, P.
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In this paper, we report on parasitic bipolar conduction occurring in floating-body effect based capacitor-less DRAMs. A way to include these effects into a previously developed model is presented. The enhanced model is then compared with electrical data realized on triple-well nMOSFET devices within the 26°C-100°C temperature range.

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Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 11 )