Further insight into the physics and modeling of floating-body capacitorless DRAMs

In this paper, we report on parasitic bipolar conduction occurring in floating-body effect based capacitor-less DRAMs. A way to include these effects into a previously developed model is presented. The enhanced model is then compared with electrical data realized on triple-well nMOSFET devices within the 26/spl deg/C-100/spl deg/C temperature range.