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Does TFT mobility impact pixel size in AMOLED backplanes?

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3 Author(s)
Kumar, A. ; Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ont., Canada ; Nathan, A. ; Jabbour, Ghassan E.

Recent advances in organic light emitting diode (OLED) device efficiencies are making the amorphous silicon (a-Si) backplane a viable solution for a large range of display sizes. This paper presents the possibilities and design challenges of a-Si active-matrix organic light-emitting-diode (AMOLED) backplanes for applications ranging from small full color cell phone displays to HDTV screens. An analytical model for the minimum pixel-area, and hence the maximum resolution for both bottom and top emitting AMOLED architectures is presented in terms of the a-Si thin-film transistor (TFT) device parameters, the process design-rules, and the pixel circuit parameters. It is established that the lower device mobility of a-Si TFTs is no longer the limiting factor. For instance, in a 20'' W/SXGA panel with full color red-green-blue subpixels, the state-of-the-art TFT processes yield a square pixel size of ∼266 μm. Further, quantitative analysis of charge-injection/charge-feedthrough error in the pixel, and the maximum allowable leakage current for the TFT is also presented.

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Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 11 )